| PART |
Description |
Maker |
| AFT05MS004N AFT05MS004NT1 |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| STI360N4F6 STP360N4F6 |
N-channel 40 V, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAK package
High avalanche ruggedness
|
ST Microelectronics
STMicroelectronics
|
| STH360N4F6-2 |
High avalanche ruggedness
N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| IPW60R041P6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| IPA50R650CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STL90N6F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| STW48N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| IPA60R190E6 IPA60R190E6-15 IPP60R190E6 IPP60R190E6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STP100N8F6 |
High avalanche ruggedness
|
STMicroelectronics
|
| STW70N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| IPD60R1K0CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STH140N6F7-2 STH140N6F7-6 |
High avalanche ruggedness
|
STMicroelectronics
|
